Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-b-PMMA Thin Film by ex Situ TEM Methods

被引:65
作者
Farrell, Richard A. [1 ,2 ,3 ]
Petkov, Nikolay [3 ,4 ]
Shaw, Matthew T. [2 ,5 ]
Djara, Vladimir [3 ]
Holmes, Justin D. [1 ,2 ,3 ]
Morris, Michael A. [1 ,2 ,3 ]
机构
[1] Univ Coll Cork, Dept Chem, Mat & Supercrit Fluid Grp, Cork, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
[3] Tyndall Natl Inst, Micronano Elect Ctr, Cork, Ireland
[4] Tyndall Natl Inst, EMAF, Cork, Ireland
[5] Intel Ireland Ltd, Leixlip, Kildare, Ireland
基金
爱尔兰科学基金会;
关键词
BLOCK-COPOLYMERS; NANOLITHOGRAPHY; METHACRYLATE); LITHOGRAPHY; ORIENTATION; FABRICATION; TEMPLATES; BEHAVIOR; DOMAINS;
D O I
10.1021/ma101827u
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Block copolymer thin films require selective elimination of one of their constituent blocks to access their potential as lithographic nanopatterns. This paper demonstrates an on-substrate TEM-based approach for establishing the removal of poly(methyl methyacrylate) from vertically oriented lamellar polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films and subsequent transfer to the underlying silicon by reactive ion etching. The ex situ microscopy technique presents an insight into the removal of PMMA, the etch end point, PS Electing, etch anisotropy, and residual PS thickness.
引用
收藏
页码:8651 / 8655
页数:5
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