US nanobelts as photoconductors

被引:185
作者
Gao, T
Li, QH
Wang, TH [1 ]
机构
[1] Hunan Univ, Micronano Technol Res Ctr, Changsha 410082, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 1000080, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
D O I
10.1063/1.1915514
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mass production of sing le-crystalline CdS nanobelts is achieved by thermal evaporation of CdS powders with the presence of Au catalyst. The as-synthesized CdS nanobelts are usually hundreds of nanometers to tens of micrometers in width, tens of nanometers in thickness, and several hundreds of micrometers in length. CdS nanobelts have a pronounced increase in conductance of up to four orders of magnitude upon exposure to white light, and also very fast response time about 1-3 s. The photoconductivity mechanism of CdS nanobelts is discussed. The results demonstrate the potential of fabricating nanosized photoconductors and optical switches using the integrity of a single CdS nanobelt. (c) 2005 American Institute of Physics.
引用
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页码:1 / 3
页数:3
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