Analysis of the performance limitations from Coulomb interaction in maskless parallel electron beam lithography systems

被引：6

作者：

Han, LQ ^{[1
]}

McCord, MA ^{[1
]}

Winograd, GI ^{[1
]}

Pease, RFW ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

multi-parallel beam; SCALPEL; Coulomb interaction; Monte Carlo simulation;

D O I：

10.1117/12.309583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proposed high throughput maskless multi-parallel electron beam systems require a large current, which can also potentially destroy the imaging quality due to Coulomb interaction effects. By using a Monte Carlo approach, we have studied the beam current limitation set by Coulomb interaction among electrons at 0.1 mu m resolution under a variety of column lengths and acceleration voltages for both a blanker aperture array system and a photocathode system. By taking into account the limits from the resist sensitivity and the freedom of system parameter selection, the throughput performance is evaluated In terms of an upper limit and a lower limit, and the feasible system configurations are suggested for achieving the desired throughput as well as 0.1 mu m resolution. Some results for SCALPEL are also obtained, and the comparison of different lithography tools are discussed.

引用

页码：292 / 301

页数：10