Relaxation of metamorphic III-V heterostructures studied by digital processing of HREM images

被引：1

作者：

Rocher, A ^{[1
]}

Snoeck, E ^{[1
]}

Goldstein, L ^{[1
]}

Jacquet, J ^{[1
]}

Fortin, C ^{[1
]}

机构：

[1] CNRS, CEMES, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse 4, France

来源：

ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES | 1998年 / 523卷

关键词：

D O I：

10.1557/PROC-523-225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crystalline structure of metamorphic heterostructures grown by epitaxy has been studied by digital processing of High Resolution Electron Microscopy (HREM) images. Two systems have been investigated: the GaSb/(001)GaAs, known to be fully relaxed by a perfect Lomer dislocation network and the GaAs/(001)InP relaxed by partial and 60 degrees dislocations randomly distributed. A transition zone can be defined between the perfect substrate and the relaxed epitaxial layer: its thickness is less than 20 Angstrom in GaSb/GaAs and more than 80 Angstrom in GaAs/InP. These results indicate that the misfit dislocations are only one of the elements involved in the relaxation of misfit stress.

引用

页码：225 / 230

页数：6