Effects of defects and impurities on electronic properties in skutterudites

被引：18

作者：

Akai, K

Kurisu, H

Moriyama, T

Yamamoto, S

Matsuura, M

机构：

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740328

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Transport properties of non-doped and doped skutterudites are discussed, which is based on results of the band structure calculation. The calculation is carried out by the full-potential linearized augmented planewave(FLAPW) method with the generalized gradient approximation(GGA). Firstly the electronic structure of doped CoSb3 is calculated, when an impurity atom is put in a void of the skutterudite structure, and np-type is determined from the results. Secondly the thermoelectric power is calculated with the constant relaxation-time approximation in the skutterudite antimonides, by using the realistic electron bands. RhSb3 differs from IrSb3 on the band structure near the Fermi level. This difference appears strongly in the thermoelectric power at a low doping case.

引用

页码：105 / 108

页数：4