Device Performance Related to Amphiphilic Modification at Charge Separation Interface in Hybrid Solar Cells with Vertically Aligned ZnO Nanorod Arrays

被引:45
作者
Bi, Dongqin
Wu, Fan
Qu, Qiyun
Yue, Wenjin
Cui, Qi
Shen, Wei
Chen, Ruiqiang
Liu, Changwen
Qiu, Zeliang
Wang, Mingtai [1 ]
机构
[1] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
关键词
OPEN-CIRCUIT VOLTAGE; POLYMER PHOTOVOLTAIC CELLS; CONJUGATED POLYMER; ELECTRON-TRANSPORT; ENERGY-TRANSFER; BAND-OFFSET; TIO2; OXIDE; EFFICIENCY; RECOMBINATION;
D O I
10.1021/jp1111247
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper reports the chemical modification effects at charge separation interface on the performance of the hybrid solar cells consisting of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as an electron donor (D) and vertically aligned ZnO nanorod arrays as an electron acceptor (A). Results show that, with increasing the modification time T-s for grafting dye Z907 onto the ZnO surface from 0 to 8 h, the charge transfer efficiency at the MEH-PPV/ZnO interface keeps increasing, the short circuit current (J(sc)) increases and reaches a peak value at T-s = 8 h, but the open circuit voltage (V-oc) increases within T-s = 1-3 h and reduces with further increasing T-s up to >= 6 h. By controlling the T-s, a peak power conversion efficiency of eta = 0.61% at AM 1.5 illumination (100 mW/cm(2)) is obtained for T-s = 6 h. It is revealed that the Z907 modification mainly contributes to the enhanced J(sc) by increasing the charge separation efficiency as a result of the improved electronic coupling property at the D/A interface rather than the light harvesting; on the other hand, the Z907 modification reduces (T-s = 1-3 h) or increases (T-s >= 6 h) the surface defect concentration of the ZnO nanorods, resulting in the increased or reduced V-oc (or electron lifetime tau(e)). It is demonstrated that trapping electrons by the surface defects may facilitate the charge separation at the D/A interface in the MEH-PPV/ZnO devices, and both V-oc and tau(e) correlate to the occupation of injected electrons in conduction band and surface defects. Further analysis provides the relation between V-oc and tau(e) in those devices.
引用
收藏
页码:3745 / 3752
页数:8
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