Epitaxial a-axis and c-axis oriented growth of YNi2B2C thin films

被引：18

作者：

Wimbush, SC ^{[1
]}

Häse, K ^{[1
]}

Schultz, L ^{[1
]}

Holzapfel, B ^{[1
]}

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 18期

关键词：

D O I：

10.1088/0953-8984/13/18/103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial thin films of the superconducting borocarbide compound YNi2B2C have been grown on single-crystal MgO substrates using pulsed laser deposition. For deposition temperatures around 650 degreesC, a-axis oriented films with a dual in-plane orientation are obtained, while at around 750 degreesC, c-axis oriented epitaxial growth occurs. In both cases, the out-of-plane texture has a full width at half-maximum (FWHM) of typically 3 degrees, while the in-plane texture has a typical FWHM of 5 degrees in the a-axis oriented case and 2.5 degrees in the c-axis oriented case. The electrical characteristics of the films reveal that the quality of the a-axis oriented sample is lower than that of the c-axis oriented one, which is comparable to that of available single crystals. Superconducting transition temperatures of 12.3 K and 14.5 K were measured for the a-axis and c-axis oriented samples, respectively, while their residual resistance ratios were found to be 3 and 9.

引用

页码：L355 / L360

页数：6

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