Characterisation of low energy boron implantation and fast ramp-up rapid thermal annealing

被引：8

作者：

Collart, EJH ^{[1
]}

de Cock, G ^{[1
]}

Murrell, AJ ^{[1
]}

Foad, MA ^{[1
]}

机构：

[1] Appl Mat, Implant Div, Horsham RH13 5PY, W Sussex, England

来源：

RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷

关键词：

D O I：

10.1557/PROC-525-227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of ramp-up rate during rapid thermal processing of ultra-shallow boron implants have been investigated. Ramp-up rates were varied between 25 degrees C and 200 degrees C for two types of anneals: soak anneals and spike anneals. It was found that the ramp-up rate had very little influence on junction depth or electrical activation for both types of anneals. Spike anneals did produce shallower profiles than soak anneal for a comparable electrical activation and may be an option for future processes.

引用

页码：227 / 235

页数：9