Comparative spectroscopic study of NiS2-xSex single crystals

被引：4

作者：

Rodrigo, JG

Vieira, S

Somasundaram, P

Honig, JM

Chudnovsky, FA

Andreev, VN

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Lab Bajas Temp, Inst Univ Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain

[2] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.10256

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By means of a low-temperature scanning tunneling microscope we have carried out a comparative study of the characteristic I-V (intensity vs voltage) curves, taken in tunnel and point-contact regimes, on NiS2-xSex single crystals, with x = 0.1, 0.3, and 0.5 between 4.2 and 300 K. We show that for certain ranges of x a gap opens up in the density of states, which we ascribe to electron correlation effects that become prominent when Se is substituted for S at concentrations close to x = 0.5. [S0163-1829(98)10639-2].

引用

页码：10256 / 10260

页数：5

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