Indacenodithiophene Semiconducting Polymers for High-Performance, Air-Stable Transistors

被引:531
作者
Zhang, Weimin [1 ,2 ]
Smith, Jeremy [1 ]
Watkins, Scott E.
Gysel, Roman [3 ]
McGehee, Michael [3 ]
Salleo, Alberto [3 ]
Kirkpatrick, James [1 ]
Ashraf, Shahid [1 ]
Anthopoulos, Thomas [1 ]
Heeney, Martin [1 ]
McCulloch, Iain [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, London SW7 2AZ, England
[2] Guangxi Univ Nationalities, Nanning 530006, Peoples R China
[3] Stanford Univ, Stanford, CA 94305 USA
关键词
CHARGE-CARRIER MOBILITY; COPOLYMERS;
D O I
10.1021/ja1049324
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm(2)/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.
引用
收藏
页码:11437 / 11439
页数:3
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