Ultrathin μc-Si films deposited by PECVD

被引：14

作者：

Rizzoli, R

Summonte, C

Piá, J

Centurioni, E

Ruani, G

Desalvo, A

Zignani, F

机构：

[1] CNR, LAMEL, I-40129 Bologna, Italy

[2] CNR, ISM, I-40129 Bologna, Italy

[3] Univ Bologna, DICASM, Bologna, Italy

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

microcrystalline Si; PECVD;

D O I：

10.1016/S0040-6090(00)01595-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystalline fraction of microcrystalline silicon films 18-200 nm thick, deposited by VHF plasma and by chemical transport deposition (CTD) was characterized by Raman and optical measurements. On a p-type CTD sample, thinner than 20 nm, a crystalline fraction as large as 78%, to our knowledge the largest obtained by VHF plasma on p-type films in this thickness range, was measured. Transmission electron microscopy shows crystallites extending to the interface with the substrate. Electrical conductivities in the range 10(-2)-10(0) S/cm, and 10(-1)-10(1) S/cm after annealing at 250 degreesC, were measured. Weak dependence of crystalline fraction and electrical properties on thickness was observed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：7 / 10

页数：4

共 6 条

[1]

Centurioni E, 1999, MATER RES SOC SYMP P, V536, P517

[2]

DASGUPTA A, 2000, IN PRESS 16 EPVSEC G

[3] In-situ of the optoelectronic properties of very thin p-type μc-Si:H films and the potential profile at the p-(μc-Si:H)/i-(a-Si:H) interface [J].