Study on growth processes of particles in germane radio frequency discharges using laser light scattering and scanning electron microscopic methods

被引:32
作者
Kawasaki, H [1 ]
Kida, J [1 ]
Sakamoto, K [1 ]
Fukuzawa, T [1 ]
Shiratani, M [1 ]
Watanabe, Y [1 ]
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect Device Engn, Fukuoka 8128581, Japan
关键词
D O I
10.1063/1.367420
中图分类号
O59 [应用物理学];
学科分类号
摘要
Growth processes of particles formed in germane (GeH4) rf parallel plate discharges are studied using a laser light scattering and scanning electron microscopic methods. For GeH4(5%)+He, 30 seem, 80 Pa, and a relatively high power of 40 W (0.51 W/cm(2)), particles begin to be observed from a very early time of about 0.13 s after the discharge initiation around the plasma/sheath boundary near the powered electrode, where emission intensity of Ge atoms is high. This appearance time of particles is extremely early compared to that (about 0.5 s) in silane (SiH4) rf discharges. The localized existence of particles suggests that short-lifetime radicals being generated at a high rate may contribute to the particle nucleation, while little information about reaction rates for GeHx (x=0-3) radicals is available. After nucleation and subsequent initial growth of particles, they coagulate quickly with one another, which brings about a growth rate considerably high compared to that for SiH4. Some Ge particles become submicron in size at an early time of 0.3 s and fall to the plasma/sheath boundary near the lower grounded electrode. For such a high coagulation rate (growth rate is about 800 nm/s), particles have irregular nonspherical shapes and most of them are agglomerates composed of chains, while they are almost spherical with a roughness of primary particle size (about 10 nm) for a low coagulation rate (growth rate is about 100 nm/s). Fast appearance of particles for GeH4 discharges also brings about rapid decrease in discharge voltage and absolute value of self-bias voltage. (C) 1998 American Institute of Physics. [S0021-8979(98)02011-8].
引用
收藏
页码:5665 / 5669
页数:5
相关论文
共 23 条
[1]   Particle nucleation and growth in a low-pressure argon-silane discharge [J].
Boufendi, L. ;
Bouchoule, A. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1994, 3 (03) :262-267
[2]  
BOUFENDI L, 1993, PLASMA SOURCES SCI T, V2, P204
[3]  
CARLILE RN, 1996, J VAC SCI TECHNOL A, V14, P487
[4]   POWDER DYNAMICS IN VERY HIGH-FREQUENCY SILANE PLASMAS [J].
DORIER, JL ;
HOLLENSTEIN, C ;
HOWLING, AA ;
KROLL, U .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :1048-1052
[5]   Detection of particles in rf silane plasmas using photoemission method [J].
Fukuzawa, T ;
Obata, K ;
Kawasaki, H ;
Shiratani, M ;
Watanabe, Y .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3202-3207
[6]  
GOREE JA, 1994, IEEE T PLASMA SCI, V22
[7]   ANALYSIS OF HIGH-RATE A-SI-H DEPOSITION IN A VHF PLASMA [J].
HEINTZE, M ;
ZEDLITZ, R ;
BAUER, GH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (10) :1781-1786
[8]  
HERHKOWITZ N, 1994, PLASMA SOURCES SCI T, V3
[9]  
HINDS WC, 1982, AEROSOL TECHNOLOGY, P360
[10]   Diagnostics of particle genesis and growth in RF silane plasmas by ion mass spectrometry and light scattering [J].
Hollenstein, Ch ;
Dorier, J-L ;
Dutta, J. ;
Sansonnens, L. ;
Howling, A. A. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1994, 3 (03) :278-285