Silicon thin film solar cells deposited under 80°C

被引：40

作者：

Ito, M

Koch, C

Svrcek, V

Schubert, MB

Werner, JH

机构：

[1] Toppan Printing Co Ltd, Tech Res Inst, Kitakatsushika, Saitama, Japan

[2] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

[3] Acad Sci Czech Republ, Inst Phys, CR-16200 Prague 6, Czech Republic

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

protocrystalline; low-temperature deposition; annealing; fill factor;

D O I：

10.1016/S0040-6090(00)01590-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We deposited silicon thin films by plasma-enhanced chemical vapor deposition (PECVD) at very low substrate temperatures of 75 and 40 degreesC. Even at these low deposition temperatures, the protocrystalline Si (pc-Si:H) exhibits a high photosensitivity and remarkably enhanced stability against light saturation. This material grows at the borderline between amorphous (a-Si:H) and nanocrystalline (nc-Si:H) phases in the deposition parameter space. Structural and optical characterization revealed a small fraction of crystallites embedded in an amorphous matrix. Thickness-dependent morphology of silicon films was revealed by absolute constant photocurrent method (CPM). We demonstrated the effect of the amorphous-to-nanocrystalline transition on the solar cell performance. The cells with a protocrystalline absorber layer showed an improved fill factor. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：129 / 131

页数：3

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