Probe card with probe pins grown by the vapor-liquid-solid (VLS) method

被引:15
作者
Asai, S
Kato, K
Nakazaki, N
Nakajima, Y
机构
[1] Research Center of Denki Kagaku Kogyo K.K., Machida City
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1996年 / 19卷 / 02期
关键词
probe card; probe pin; vapor-liquid-solid crystal growth; silicon; whisker; silicon-on-insulator; wafer level burn-in;
D O I
10.1109/95.506112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Probe cards mounted with vapor-liquid-solid (VLS) grown silicon whiskers have been produced, in this development the ''mesa method,'' in which VLS whiskers are grown on silicon mesas topped with gold hats, has been successfully introduced which allows accurate positioning of the VLS whiskers, The VLS whisker grows vertically to over 2000 mu m in length and a diameter of 10-100 mu m has been obtained. The metal-plated whisker has enough compliance with the overdrive capability of up to 400 mu m to compensate for the prober error and the possible irregularity of the wafer surface,which maintains reliable contact, Two fabrication methods to accomplish the wiring of the VLS whiskers onto the card assembly are proposed, One method is to transfer the VLS whiskers onto a patterned substrate after encapsulating in a transfer media, the other is to grow the VLS whiskers on a patterned silicon-on-insulator (SOI) wafer. The design concept of the whisker probe pins is also proposed. The card has the potential to he used as a narrow-pitch, high pad-count probe card which has more than 300 probe pins which are less than 50 mu m in pitch. The card obtained by the SOI process has potential application as a wafer level burn-in (WLBI) card with the same thermal expansion coefficient as a silicon wafer. Patterning on a SOI wafer enables a possible low-impedance transmission line in a high speed circuit.
引用
收藏
页码:258 / 267
页数:10
相关论文
共 18 条
  • [1] ASAI S, 1995, J APPL POLYM SCI, V56, P767
  • [2] BARSOTTI C, 1988, P IEEE INT TEST C, P608
  • [3] Furuyama T., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P639, DOI 10.1109/IEDM.1993.347230
  • [4] REGULAR ARRAYS OF LAB6 WHISKERS GROWN ON SINGLE-CRYSTAL SUBSTRATES BY THE VAPOR LIQUID SOLID METHOD
    GIVARGIZOV, EI
    OBOLENSKAYA, LN
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1986, 117 (1-2): : 97 - 103
  • [5] NEXT-GENERATION BURN-IN DEVELOPMENT
    GRALIAN, D
    [J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1994, 17 (02): : 190 - 196
  • [6] Hirano T., 1994, Proceedings 1994 IEEE Multi-Chip Module Conference MCMC-94 (Cat. No.93CH3396-9), P89, DOI 10.1109/MCMC.1994.292521
  • [7] HONG S, 1989, IEEE INT EL DEV M IE, P282
  • [8] KIESTER J, 1992, P IEEE INT TEST C, P927
  • [9] LOGAN JK, 1991, P 5 INT SAMPE EL C J, P559
  • [10] MIYAKE K, 1994, P IMC 1994 OM APR, P156