Lattice-matched GaNPAs-on-silicon tandem solar cells

被引：50

作者：

Geisz, JF ^{[1
]}

Olson, JM ^{[1
]}

Friedman, DJ ^{[1
]}

Jones, KM ^{[1
]}

Reedy, RC ^{[1
]}

Romero, MJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488226

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A two-junction device consisting of a 1.7-eV GaNPAS junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the lll-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a V-oc of 1.53 V and an AM1.5G efficiency of 5.2% without any antirefiection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.

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页码：695 / 698

页数：4

相关论文

共 11 条

[1] Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates [J].

Andre, CL ;

Khan, A ;

Gonzalez, M ;

Hudait, MK ;

Fitzgerald, EA ;

Carlin, JA ;

Currie, MT ;

Leitz, CW ;

Langdo, TA ;

Clark, EB ;

Wilt, DM ;

Ringel, SA .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :1043-1046

[2] 29.5-PERCENT-EFFICIENT GALNP/GAAS TANDEM SOLAR-CELLS [J].

BERTNESS, KA ;

KURTZ, SR ;

FRIEDMAN, DJ ;

KIBBLER, AE ;

KRAMER, C ;

OLSON, JM .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :989-991

[3]

Geisz J, 2004, MATER RES SOC SYMP P, V799, P27

[4] Ganpas solar cells lattice-matched to GaP [J].

Geisz, JF ;

Friedman, DJ ;

Kurtz, S .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :864-867

[5] Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition [J].

Geisz, JF ;

Reedy, RC ;

Keyes, BM ;

Metzger, WK .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (03) :223-231

[6] Photocurrent of 1 eV GaInNAs lattice-matched to GaAs [J].

Geisz, JF ;

Friedman, DJ ;

Olson, JM ;

Kurtz, SR ;

Keyes, BM .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :401-408

[7] MODELING OF 2-JUNCTION, SERIES-CONNECTED TANDEM SOLAR-CELLS USING TOP-CELL THICKNESS AS AN ADJUSTABLE-PARAMETER [J].

KURTZ, SR ;

FAINE, P ;

OLSON, JM .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1890-1895

[8] VERY LOW DISLOCATION DENSITY GAAS ON SI USING SUPERLATTICES GROWN BY MOCVD [J].

SOGA, T ;

NISHIKAWA, H ;

JIMBO, T ;

UMENO, M .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :479-482

[9] Effects of nitrogen on the band structure of GaNxP1-x alloys [J].

Xin, HP ;

Tu, CW ;

Zhang, Y ;

Mascarenhas, A .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1267-1269

[10] Control of structural defects in group III-V-N alloys grown on Si [J].

Yonezu, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (08) :762-768