Amorphous silicon X-ray detectors

被引：22

作者：

Hoheisel, M

Arques, M

Chabbal, J

Chaussat, C

Ducourant, T

Hahm, G

Horbaschek, H

Schulz, R

Spahn, M

机构：

[1] Siemens AG, Med Engn, Basic Dev, D-91050 Erlangen, Germany

[2] Trixell, ZI Centralp, F-38430 Moirans, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

amorphous silicon; X-ray detectors; scintillator;

D O I：

10.1016/S0022-3093(98)00316-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous silicon (a-Si) has proven to be the most suitable semiconductor for large-area devices. Our detector prototype with a pixel pitch of 200 mu m and an active area of 20 x 20 cm(2) uses one PIN photodiode and one PIN switching diode per pixel for readout. Cesium iodide is used as scintillator. Evaluation of the detector was performed in the laboratory as well as in a clinical site where it was integrated in a C-arm for cardiological investigations. In this paper, modulation transfer function, dynamic behavior, noise figures, and quantum yield will be discussed. The performance of these detectors represents a first step towards the goal of replacing existing fluoroscopic or radiographic X-ray systems for medical diagnosis. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1300 / 1305

页数：6

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