Interference effect in the resonant emission of a semiconductor microcavity

被引:8
作者
Cassabois, G
Bogani, F
Triques, ALC
Delalande, C
Roussignol, P
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[2] Univ Florence, Dipartimento Energet, I-50100 Florence, Italy
[3] Univ Florence, Ist Nazl Fis Mat, European Lab Nonlinear Spect, I-50100 Florence, Italy
关键词
D O I
10.1103/PhysRevB.64.045321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a phenomenological description of the coherent emission from a semiconductor microcavity in the strong-coupling regime. We consider two main contributions which are calculated in the framework of the semiclassical approach of the linear dispersion theory: reflectivity corresponds to the response of a uniform microcavity while resonant Rayleigh scattering (RRS) arises from disorder. Our simulations are compared to experimental results obtained at normal incidence in a backscattering geometry by means of cw spectroscopy and interferometric correlation with subpicosecond resolution. In this geometry, a fair agreement is reached assuming interferences between the two aforementioned contributions. This interference effect gives evidence of the drastic modification of the RRS emission pattern of the embedded quantum well induced by the Fabry-Perot cavity.
引用
收藏
页码:453211 / 4532110
页数:10
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