Enhancement of minority carrier transport in forward biased GaN p-n junction

被引：23

作者：

Chernyak, L ^{[1
]}

Nootz, G

Osinsky, A

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Corning Appl Technol, Woburn, MA 01801 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 14期

关键词：

D O I：

10.1049/el:20010605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Forward bias application to a GaN p-n junction (current density similar to 12A/cm(2)) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.

引用

页码：922 / 923

页数：2

共 5 条

[1] Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices [J].