35 μm pitch at ULIS, a breakthrough

被引：13

作者：

Trouilleau, C ^{[1
]}

Crastes, A ^{[1
]}

Legras, O ^{[1
]}

Tissot, JL ^{[1
]}

Chatard, JP ^{[1
]}

机构：

[1] ULIS, F-38113 Veurey Voroize, France

来源：

Infrared Technology and Applications XXXI, Pts 1 and 2 | 2005年 / 5783卷

关键词：

IRFPA; 35 mu m pitch; amorphous silicon; microbolometer; uncooled IR detector; DVE;

D O I：

10.1117/12.605336

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reviews ULIS'progress, on 35 mu m pitch, in amorphous silicon uncooled microbolometer focal plane (UFPA) technology and product development over the last year. The ULIS FPA products have been described in great detail, including product capabilities and complete EO performances. At 60 Hz frame rate, focal planes with 40 mK (f/1) NETD are now achieved in production with a spatial fixed pattern noise lower than 25 mK after gain and offset compensation. Key improvements, compared to 45 gm pitch technology, have been the achievement of microbolometer resistance uniformity better than 0.5 % (standard deviation) on the IRFPA die for the different formats. Thanks to a new pixel design, high fill factor along with low thermal time constant (7 ms), 35 mu m pitch amorphous silicon UFPAs are prime candidates for FLIR applications.

引用

页码：578 / 585

页数：8