High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

被引：67

作者：

Akita, M ^{[1
]}

Kishimoto, S ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

AlGaN/GaN HEMT; electron velocity; f(T); temperature dependence;

D O I：

10.1109/55.936348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency measurements of the 1.3-mum-long gate AlGaN/GaN HEMTs have been performed at temperatures ranging from 23 to 187 degreesC. The cutoff frequency f(T) decreased with increasing temperature, It was 13.7 and 8.7 GHz at 23 and 187 degreesC, respectively. The effective electron velocities v(eff) in the channel evaluated from the total delay time versus ID-inverse relation were 1.2 and 0.8 x 10(7) cm/s at 23 and 187 degreesC, respectively.

引用

页码：376 / 377

页数：2

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