Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide

被引：103

作者：

Lalic, N ^{[1
]}

Linnros, J ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

silicon nanocrystal; electroluminescence; LED; ion implantation;

D O I：

10.1016/S0022-2313(98)00109-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Light emitting diodes (LED), continuously operable at room temperature, have been fabricated by Si (+) ion implantation into SiO2 and subsequent annealing in order to form Si nanocrystals. A highly doped poly-Si layer was used to enhance injection into nanocrystals. Visible electroluminescence (EL) was observed from the LEDs with oxide thickness less than or equal to 180 Angstrom for bias voltages above 8 V. The EL decay transient was similar to stretched-exponential decays observed for photoluminescence (PL) from Si nanocrystals. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 267

页数：5

共 16 条

[11] ELECTROLUMINESCENT POROUS SILICON DEVICE WITH AN EXTERNAL QUANTUM EFFICIENCY GREATER-THAN 0.1-PERCENT UNDER CW OPERATION [J].