Material characterization for III-nitride based light emitters

被引：5

作者：

Kneissl, M ^{[1
]}

Bour, DP ^{[1
]}

Romano, LT ^{[1
]}

Krusor, BS ^{[1
]}

McCluskey, M ^{[1
]}

Goetz, W ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II | 1998年 / 3279卷

关键词：

OMVPE; MOCVD; wide bandgap semiconductors; III-nitride; GaN; AlGaN; InGaN; light emitting diodes; laser diodes; quantum well;

D O I：

10.1117/12.304411

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A review is presented of the electrical and optical properties of nitride based optoelectronic devices, in particular AlGaInN light emitting diodes and laser diode structures. The III-nitride films and devices were grown by organometalic vapor-phase epitaxy (OMVPE) on c- and a-face sapphire substrates. We will discuss the structural properties of GaN, InGaN and AlGaN films, heterostructures and InGaN/GaN quantum wells using X-ray diffraction and cross-sectional transmission electron microscope and describe their electrical and optical properties characterized by Hall effect, photoluminescence, and electroluminescence measurements.

引用

页码：69 / 76

页数：8