Planar defects in Sn-doped single-crystal ZnO nanobelts

被引:63
作者
Deng, Rui
Zhang, XiTian [1 ]
Zhang, E.
Liang, Yao
Liu, Zhuang
Xu, HaiYang
Hark, SuiKong
机构
[1] Harbin Normal Univ, Dept Phys, Harbin 150080, Peoples R China
[2] Chinese Univ Hong Kong, Dept Phys, Shatin, Peoples R China
关键词
D O I
10.1021/jp073668+
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Sn-doped ZnO nanobelts were synthesized by chemical vapor deposition. These single-crystalline nanobelts with a wurtzite structure grow along the < 0110 > direction. Transmission electron microscopy shows the existerice of planar defects in the middle of each nanobelt, which contains antiphase and inversion boundaries. The appearance of inversion boundaries parallel to the (0001) plane is attributed to the release of structural strains, which result from the introduction of Sn+4 ions. In photoluminescence measurements, a strong ultraviolet peak and a weak visible band were observed at room temperature.
引用
收藏
页码:13013 / 13015
页数:3
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