Gate-controllable spin battery

被引：86

作者：

Long, W ^{[1
]}

Sun, QF

Guo, H

Wang, J

机构：

[1] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China

[2] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada

[3] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

[4] Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China

[5] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 07期

关键词：

D O I：

10.1063/1.1603331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. (C) 2003 American Institute of Physics.

引用

页码：1397 / 1399

页数：3

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