Effect of indium doping on structural, optical and electrical properties of Cd0.95Hg0.05S thin films

The thin films of Cd0.95Hg0.05S (solution composition) doped with indium were synthesized and measurement of some characteristic properties are reported in this paper. It has been observed from X-ray diffraction patterns that there is a decrease in an interplanar distance initially up to 0.05 mol%. In doping and, thereafter, it increases with an increase of indium concentration. The action spectra are recorded at room temperature. These studies indicate that absorption edge changes from 705 to 762 nn with doping concentration up to 0.05 mol%. Similarly, the energy gap is found to be decreased from 1.76 to 1.63 eV up to 0.05 mo1% indium, while it increases with an increase in indium content. The extrema's found in low concentration of indium are also reflected in dark electrical conductivity. These results are discussed in terms of carrier concentration (n), mobility (mu) and interplanar distances because of indium doping. (C) 1999 Elsevier Science S.A. All rights reserved.