Conductance of p-n-p structures with "Air-Bridge" top gates

被引：161

作者：

Gorbachev, Roman V.

Mayorov, Alexander S.

Savchenko, Alexander K. ^{[1
]}

Horsell, David W.

Guinea, Francisco

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

来源：

NANO LETTERS | 2008年 / 8卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1021/nl801059v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.

引用

页码：1995 / 1999

页数：5

共 18 条

[1] Berry's phase and absence of back scattering in carbon nanotubes [J].