Equilibrium shape of CoSi2 hut clusters on Si(100)

被引:3
作者
Brongersma, SH [1 ]
Castell, MR
Perovic, DD
Zinke-Allmang, M
机构
[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[2] Univ Toronto, Dept Met & Mat Sci, Toronto, ON M5S 3E4, Canada
[3] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期
关键词
D O I
10.1116/1.590146
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CoSi2 clusters of constant height on a Si(100) surface grow in a square shape at first, but at a critical size a shape transition to clusters with large aspect ratios occurs. With each cluster connected to an implanted layer of cobalt by a thermally induced defect that serves as a diffusion channel, clusters can grow independently with a continuous supply of cobalt. When the cobalt supply is limited, clusters grow up to a specific volume and then have time to adjust their height, assuming their minimum-energy shape. Although calculations indicate that this should be a square pyramid, experiments indicate that a more elongated cluster corresponds to equilibrium. (C) 1998 American Vacuum Society.
引用
收藏
页码:2188 / 2190
页数:3
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