Conduction-valence Landau level mixing effect

被引：41

作者：

Chiang, JC

Tsay, SF

Chau, ZM

Lo, I

机构：

[1] Department of Physics, National Sun Yat-sen University, Kaohsiung

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.77.2053

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic Landau level structures of the symmetric Alsb-AlxGa1-xSb-InAs-AlxGa1-xSb-AlSb quantum wells are investigated within a six-band k . p finite difference method. We demonstrated that the conduction-valence Landau level mixing can yield a significant spin splitting for the InAs conduction-band electrons and therefore produce a prominent electron double-line structure with a nearly field-independent energy separation in the cyclotron-resonance spectra. This mixing effect can also yield strong oscillations in the electron cyclotron-resonance mass, amplitude, and linewidth.

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页码：2053 / 2056

页数：4

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