2D junction delineation for the failure analysis of silicon carbide devices

被引：4

作者：

Buzzo, M ^{[1
]}

Ciappa, M ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] Infineon Technol, Villach, Austria

来源：

IPFA 2005: Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits | 2005年

关键词：

D O I：

10.1109/IPFA.2005.1469140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 109

页数：5

共 9 条

[1]

Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO

[2]

2-F

[3] Scanning capacitance microscopy investigations of SiC structures [J].

Bowallius, O ;

Anand, S ;

Nordell, N ;

Landgren, G ;

Karlsson, S .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) :209-211

[4]

Buzzo M, 2004, MICROELECTRON RELIAB, V44, P1681, DOI [10.1016/j.microrel.2004.07.053, 10.1016/j.microlrel.2004.07.053]

[5] Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy [J].

Giannazzo, F ;

Calcagno, L ;

Roccaforte, F ;

Musumeci, P ;

La Via, F ;

Raineri, V .

APPLIED SURFACE SCIENCE, 2001, 184 (1-4) :183-189

[6]

GIANNAZZO F, 2001, APPL PHYS LETT, V79

[7]

Palmour JW, 1997, ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P25, DOI 10.1109/ISPSD.1997.601423

[8] Simulation and experimental validation of scanning capacitance microscopy measurements across low-doped epitaxel PN-junction [J].

Stangoni, M ;

Ciappa, M ;

Buzzo, M ;

Leicht, M ;

Fichtner, W .

MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) :1701-1706

[9]

ZAVYALOV VV, 2000, J VAC SCI TECHNOL B, V18

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