Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism

被引：136

作者：

Yu, DP ^{[1
]}

Xing, YJ

Hang, QL

Yan, HF

Xu, J

Xi, ZH

Feng, SQ

机构：

[1] Peking Univ, Dept Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[2] Peking Univ, Mesoscop Phys Natl Lab, Beijing 100871, Peoples R China

[3] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 9卷 / 02期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

Si nanowires; quantum confinement effect; low dimensionality;

D O I：

10.1016/S1386-9477(00)00202-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly oriented amorphous silicon nanowires (a-SiNWs) were grown on Si (111). The length and diameter of oriented SiNWs are almost uniform, which are 1 mum and 25 nm, respectively. Different from the well-known vapor-liquid-solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism (SLS). This synthesis method is simple and controllable. It may be useful in large-scale synthesis of various nanowires. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：305 / 309

页数：5

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