Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

被引：15

作者：

Bae, JW ^{[1
]}

Kim, JS ^{[1
]}

Yeom, GY ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, Kyunggi Do, South Korea

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷

关键词：

ITO; PC; IBAE; oxygen ion beam; radical;

D O I：

10.1016/S0168-583X(01)00510-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (< 90 degreesC) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cm x 20 cm showed the sheet resistance of less than 40 Omega /sq., the optical transmittance of above 90%. and the uniformity of about 5%. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：311 / 314

页数：4

共 4 条

[1] THE ORIGIN OF THE INHOMOGENEITY OF ELECTRICAL-RESISTIVITY IN MAGNETRON-SPUTTERED INDIUM TIN OXIDE THIN-FILMS [J].

ICHIHARA, K ;

INOUE, N ;

OKUBO, M ;

YASUDA, N .

THIN SOLID FILMS, 1994, 245 (1-2) :152-156

[2] GLOBAL-MODEL OF AR, O-2, CL-2, AND AR/O-2 HIGH-DENSITY PLASMA DISCHARGES [J].

LEE, C ;

LIEBERMAN, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02) :368-380

[3] Structural studies of ITO thin films with the Rietveld method [J].

Quaas, M ;

Eggs, C ;

Wulff, H .

THIN SOLID FILMS, 1998, 332 (1-2) :277-281

[4] PREPARATION OF INDIUM TIN OXIDE-FILMS AT ROOM-TEMPERATURE BY PULSED-LASER DEPOSITION [J].

ZHENG, JP ;

KWOK, HS .

THIN SOLID FILMS, 1993, 232 (01) :99-104

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