4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

被引：39

作者：

Moore, KE ^{[1
]}

Weitzel, CE ^{[1
]}

Nordquist, KJ ^{[1
]}

Pond, LL ^{[1
]}

Palmour, JW ^{[1
]}

Allen, S ^{[1
]}

Carter, CH ^{[1
]}

机构：

[1] CREE RES, DURHAM, NC 27713 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 02期

关键词：

D O I：

10.1109/55.553047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC MESPET's on conducting substrates were fabricated and characterized for large-signal performance over a wide range of gate and drain biases, At V-ds = 25 V the current density was 225 mA/mm and the peak f(max) for these devices was 16 GHz, At V-ds = 50 V and I-dq = 50% I-dss, the power density was 3.3 W/mm at 850 MHz. At V-ds = 40 V and I-dq = 5% I-dss, the power added efficiency was 65.7%, which is the highest ever reported for a SIC MESFET. This is the first Class Il data presented for a SiC MESFET.

引用

页码：69 / 70

页数：2

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