First-principles theory of inelastic currents in a scanning tunneling microscope

被引:41
作者
Stokbro, K
Hu, BYK
Thirstrup, C
Xie, XC
机构
[1] Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
[2] RIKEN, Surface & Interface Lab, Wako, Saitama 351, Japan
[3] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
关键词
D O I
10.1103/PhysRevB.58.8038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A first-principles theory of inelastic tunneling between a model probe tip and an atom adsorbed on a surface is presented, extending the elastic tunneling theory of Tersoff and Hamann. The inelastic current is proportional to the change in the local density of states at the center of the tip due to the addition of the adsorbate. We use the theory to investigate the vibrational heating of an adsorbate below a scanning tunneling microscopy tip. We calculate the desorption rate of PI from Si(100)-H(2 X 1) as a function of the sample bias and tunnel current, and find excellent a,agreement with recent experimental data. [S0163-1829(98)09036-5].
引用
收藏
页码:8038 / 8041
页数:4
相关论文
共 26 条
[1]   Basic steps of lateral manipulation of single atoms and diatomic clusters with a scanning tunneling microscope tip [J].
Bartels, L ;
Meyer, G ;
Rieder, KH .
PHYSICAL REVIEW LETTERS, 1997, 79 (04) :697-700
[2]   THEORY OF THE EIGLER SWITCH [J].
BRANDBYGE, M ;
HEDEGARD, P .
PHYSICAL REVIEW LETTERS, 1994, 72 (18) :2919-2922
[3]  
Chen C. J., 1993, INTRO SCANNING TUNNE
[4]   AN ATOMIC SWITCH REALIZED WITH THE SCANNING TUNNELING MICROSCOPE [J].
EIGLER, DM ;
LUTZ, CP ;
RUDGE, WE .
NATURE, 1991, 352 (6336) :600-603
[5]   POSITIONING SINGLE ATOMS WITH A SCANNING TUNNELING MICROSCOPE [J].
EIGLER, DM ;
SCHWEIZER, EK .
NATURE, 1990, 344 (6266) :524-526
[6]   Theory of atom transfer with a scanning tunneling microscope [J].
Gao, SW ;
Persson, M ;
Lundqvist, BI .
PHYSICAL REVIEW B, 1997, 55 (07) :4825-4836
[7]   Quantum kinetic theory of vibrational heating and bond breaking by hot electrons [J].
Gao, SW .
PHYSICAL REVIEW B, 1997, 55 (03) :1876-1886
[8]   ATOMIC SWITCH PROVES IMPORTANCE OF ELECTRON-HOLE PAIR MECHANISM IN PROCESSES ON METAL-SURFACES [J].
GAO, SW ;
PERSSON, M ;
LUNDQVIST, BI .
SOLID STATE COMMUNICATIONS, 1992, 84 (03) :271-273
[9]   VIBRATIONAL DYNAMICS OF THE SI-H STRETCHING MODES OF THE SI(100)/H-2X1 SURFACE [J].
GUYOTSIONNEST, P ;
LIN, PH ;
HILLER, EM .
JOURNAL OF CHEMICAL PHYSICS, 1995, 102 (10) :4269-4278
[10]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919