Epitaxial BaTiO3 thin films on MgO

被引：50

作者：

Buchal, C ^{[1
]}

Beckers, L ^{[1
]}

Eckau, A ^{[1
]}

Schubert, J ^{[1
]}

Zander, W ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 56卷 / 2-3期

关键词：

BaTiO3 (barium titanate); optical waveguides; pulsed laser deposition; thin films;

D O I：

10.1016/S0921-5107(98)00219-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxy of thin films of BaTiO3 is motivated by the potential integration of electrooptical functions onto silicon. An epitaxial buffer layer of MgO on Si will be needed for optical waveguide formation and for enabling the growth of BaTiO3. In a first step, epitaxial waveguide structures of c-axis oriented BaTiO3 thin films on MgO (001) have been grown by pulsed laser deposition (PLD). The structural properties of the samples have been characterized by Rutherford backscattering spectrometry/ion channeling (RBS/C) and X-Ray diffraction (XRD). We found excellent crystalline quality even up to a thickness of a few microns. Waveguide losses of 2.9 dB cm(-1) have been demonstrated. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：234 / 238

页数：5

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