Electrical properties of cadmium telluride films synthesized in a thermal field with a temperature gradient

被引：6

作者：

Belyaev, AP ^{[1
]}

Rubets, VP ^{[1
]}

Nuzhdin, MY ^{[1
]}

机构：

[1] St Petersburg Inst Technol, St Petersburg 198013, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

Crystal Structure; Cadmium; Temperature Gradient; Film Thickness; Electrical Property;

D O I：

10.1134/1.1582529

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The correlation between the electrical properties of CdTe films synthesized in a thermal field with a temperature gradient and their crystal structure, the ambient pressure, and the film thickness was investigated. Films of different structure, from polycrystalline to block, were studied. The conductivity of the films increases with improving their crystal structure, increasing the ambient pressure, and decreasing the film thickness. The experimental results can be satisfactorily explained in the context of a model of an inhomogeneous semiconductor with intercrystalline barriers. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：646 / 648

页数：3

共 8 条

[1] CONDUCTION PROCESSES IN INHOMOGENEOUS CDSEXTE1-X SEMICONDUCTORS
BELYAEV, AP
KALINKIN, JP
[J]. THIN SOLID FILMS, 1988, 158 (01) : 25 - 36
[2] BELYAEV AP, 1984, SOV PHYS SEMICOND+, V18, P1234
[3] Effect of thermodiffusion on perfection of crystal structures formed by condensation from vapor phase
Belyaev, AP
Rubets, VP
Nuzhdin, MY
Kalinkin, IP
[J]. TECHNICAL PHYSICS, 2002, 47 (04) : 491 - 494
[4] Mechanisms of heteroepitaxial growth of cadmium telluride thin films in a thermal field of a temperature gradient
Belyaev, AP
Rubets, VP
Nuzhdin, MY
Kalinkin, IP
[J]. PHYSICS OF THE SOLID STATE, 2001, 43 (04) : 778 - 782
[5] Mott N. F., 1971, ELECT PROCESSES NONC
[6] OSSIPYAN YA, 1986, ADV PHYS, V35, P115
[7] Shik A Y, 1976, SOV PHYS JETP, V44, P606
[8] Shklovskii V I, 1984, ELECT PROPERTIES DOP

← 1 →