Mesoscale magnetism at the grain boundaries in colossal magnetoresistive films

被引：49

作者：

Soh, YA

Aeppli, G

Mathur, ND

Blamire, MG

机构：

[1] NEC Res Inst, Princeton, NJ 08540 USA

[2] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.63.020402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report mesoscale regions with distinctive magnetic properties in epitaxial La1-xSrxMnO3 films which exhibit tunneling-like magnetoresistance across grain boundaries. By using temperature-dependent magnetic force microscopy we observe that the mesoscale regions are formed near the grain boundaries and have a different Curie temperature (up to 20 K higher) than the grain interiors. Our images provide direct evidence for previous speculations that the grain boundaries in thin films are not magnetically and electronically sharp interfaces. The size of the mesoscale regions varies with temperature and nature of the underlying defect.

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