90° magnetization switching in thin Fe films grown on stepped Cr(001)

被引：44

作者：

Escorcia-Aparicio, EJ ^{[1
]}

Choi, HJ ^{[1
]}

Ling, WL ^{[1
]}

Kawakami, RK ^{[1
]}

Qiu, ZQ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.81.2144

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The ferromagnetic/antiferromagnetic interfacial interaction was investigated in thin Fe films grown on stepped Cr(001) with the steps parallel to the [100]direction. Above the Neel temperature of the Cr, the atomic steps induce a uniaxial magnetic anisotropy with the easy axis parallel to the step edges. Below the Neel temperature, the Fe-Cr interfacial interaction favors the Fe magnetization perpendicular to the step edges. The competition between the Fe-Cr interaction and the step-induced magnetic anisotropy re suits in an in-plane 90 degrees magnetization switching from perpendicular to the step edges at low step-density to parallel to the seep edges at high step density.

引用

页码：2144 / 2147

页数：4

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