Biexciton emission from ZnO/Zn0.74Mg0.26O multiquantum wells

被引：59

作者：

Sun, HD

Makino, T

Segawa, Y

Kawasaki, M

Ohtomo, A

Tamura, K

Koinuma, H

机构：

[1] Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1375830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence due to the radiative recombination of localized biexcitons has been observed at low temperature (5 K) in ZnO/Zn0.74Mg0.26O multiquantum wells grown by laser-molecular-beam epilaxy on a lattice-matched ScAlMgO4 substrate (0001). The emission components due to the recombination of localized excitons and biexcitons and due to the exciton-exciton scattering were verified by examining their relative energy positions and intensity dependence on excitation power density. The excitation threshold for biexciton emission was significantly lower than that for exciton-exciton scattering. The binding energy of biexcitons in multi-quantum wells is largely enhanced by quantum confinement effect. (C) 2001 American Institute of Physics.

引用

页码：3385 / 3387

页数：3

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