Photoelectrochemical Properties of Heterojunction CdTe/TiO2 Electrodes Constructed Using Highly Ordered TiO2 Nanotube Arrays

被引:212
作者
Seabold, Jason A. [1 ]
Shankar, Karthik [2 ,3 ]
Wilke, Rudeger H. T. [2 ,3 ]
Paulose, Maggie [2 ,3 ]
Varghese, Oomman K. [2 ,3 ]
Grimes, Craig A. [2 ,3 ]
Choi, Kyoung-Shin [1 ,3 ]
机构
[1] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA
[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
关键词
D O I
10.1021/cm8010666
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A heterojunction CdTe/TiO2 photoelectrode was prepared by electrochemically filling the tubes and tube-to-tube voids of a TiO2 nanotube array with CdTe. The TiO2 nanotube arrays used in this study were prepared by anodizing titanium films, which resulted in closely packed n-type TiO2 tubes with an average inner pore diameter of 50 nm, wall thickness of approximately 13 nm. and length of 250-300 nm. CdTe was cathodically deposited using TiO2 nanotubes as the working electrode at E = -0.4 V vs Ag/AgCl at 85 degrees C (3H(+) + Cd2+ + HTeO2+ + 6e(-) -> CdTe + 2H(2)O). The resulting electrodes contained three-dimensionally organized CdTe/TiO2 junction structures with significantly enhanced junction areas. Formation of the CdTe/TiO2 junction improved the photocurrent generation and photostability of the CdTe layer when compared with a two-dimensional CdTe layer deposited directly on a conducting substrate (i.e., fluorine-doped tin oxide). A more intimate and conformal CdTe/TiO2 junction was formed via a new deposition technique developed in this study that promotes deposition of CdTe only in the TiO2 tubes while minimizing deposition at the tube entrances, thus preventing pore clogging. The CdTe/TiO2 electrodes prepared by the new technique created a longer path length for light in the CdTe layer as well as increased CdTe/TiO2 and CdTe/electrolyte junction areas. This resulted in enhanced photon absorption and photocurrent generation, achieved using a minimal amount of CdTe.
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页码:5266 / 5273
页数:8
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