2-GHz RF front-end circuits in CMOS/SIMOX operating at an extremely low voltage of 0.5 V

被引：43

作者：

Harada, M ^{[1
]}

Tsukahara, T ^{[1
]}

Kodate, J ^{[1
]}

Yamagishi, A ^{[1
]}

Yamada, J ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Telecommun Energy Labs, Low Energy Elect Lab, Atsugi, Kanagawa 2430198, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 12期

关键词：

CMOS; low voltage; mixer; RF; SOI; VCO;

D O I：

10.1109/4.890316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

2-GHz RF front-end circuits [low noise amplifier (LNA), mixer, and voltage controlled oscillator (VCO)I enabling 0.5-V operation are presented, The circuits were fabricated by 0.2-mum fully depleted CMOS/SIMOX technology, The mixer has an LC-tuned folded structure to avoid stacking transistors, Undoped-channel MOSFETs are used in the VCO core and in a complementary source follower as output buffers for the mixer and the VCO. The noise figures of 3.5 dB (LNA) and 16.1 dB (mixer), IIP3 of -6 dBm (mixer), and phase noise of -110 dBc/Hz at 1-MHz offset (VCO) are achieved at a supply voltage of 1 V, They dissipate 2 mW (LNA), 4 mW (mixer), and 3 mW (VCO) at 0.5.

引用

页码：2000 / 2004

页数：5