Low consumption front end of the line cleaning: LC-FEOL

被引：7

作者：

Besson, P

Cowache, C

Fabbri, JM

Tardif, F

Beverina, A

机构：

[1] ST Microelect, FR-38921 Crolles, France

[2] CEA Grenoble, GRESSI LETI, FR-38054 Grenoble 09, France

[3] Akrion, Allentown, PA 18106 USA

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷

关键词：

cleaning; megasonics; silicon consumption;

D O I：

10.4028/www.scientific.net/SSP.76-77.199

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents the Low Consumption Front End Of the Line cleaning: LC-FEOL, which addresses technical constraints imposed by SOI and advanced CMOS technologies. These technologies require low silicon and oxide consumption with the same or higher performance levels in terms of particle and metal removal efficiency as standard cleanings. The LC-FEOL cleaning uses dilute dilute SCI and HF chemistries combined with megasonic energy as basic cleaning mechanism and respects the general environmental tendencies by drastically reducing the amount of chemical products that are used.

引用

页码：199 / 202

页数：4