Top surface imaging through silylation

被引：16

作者：

Postnikov, SV ^{[1
]}

Somervell, MH ^{[1
]}

Henderson, CL ^{[1
]}

Katz, S ^{[1
]}

Willson, CG ^{[1
]}

Byers, J ^{[1
]}

Qin, AW ^{[1
]}

Lin, QH ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

top surface imaging; silylation; 193 nm lithography; EUV lithography; diffusion barriers;

D O I：

10.1117/12.312370

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Top surface imaging provides one process alternative for 193 nm lithography and is an important aspect of the EUV imaging strategy. This paper describes an effort to characterize the fundamental mechanisms underlying the silylation process. The extent of silylation has been measured as a function of exposure dose using FTIR spectroscopy. These studies demonstrate that for certain polymers, the extent of silylation has a nonlinear dependence on exposure dose. Simulation modeling has demonstrated how this nonlinearity may contribute to improved contrast. The influence of resist optical density on the shape of the silylated image has also been simulated, and these results have helped guide the design of polymers with the optimal optical density. The TSI processes function on the basis of photogenerated differences in the reactive transport of the silylating agent into and through the resist film. We are exploring alternative mechanisms for photo-induced changes in the permeability of the silylating agent. The results of these studies will be presented.

引用

页码：997 / 1008

页数：4