The electronic structure of porphyrin/metal interfaces studied by ultraviolet photoelectron spectroscopy

被引:17
作者
Yoshimura, D
Ishii, H
Narioka, S
Sei, M
Miyazaki, T
Ouchi, Y
Hasegawa, S
Harima, Y
Yamashita, K
Seki, K
机构
[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
[2] HIROSHIMA UNIV,FAC INTEGRATED ARTS & SCI,HIGASHIHIROSHIMA 724,JAPAN
关键词
D O I
10.1016/S0368-2048(96)80098-3
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Electronic structure of interfaces between 5,10,15,20-tetraphenylporphynatozinc (ZnTPP) and four metals (Mg, Al, Ag, and Au) were studied by ultraviolet photoelectron spectroscopy (UPS). The energy levels of ZnTPP relative to the Fermi level of substrate metals could be expressed as linear functions of the work function of metals with the shift of the vacuum level at interface (Delta). The slope of the linear functions was about unity. This indicates that the energy levels of ZnTPP are fixed to the vacuum level of substrate metal with constant interfacial dipole. 5,10,15,20-Tetra(4-pyridyl)porphyrin (H2T(4-Py)P)/metal and 5,10,15,20-tetraphenylporphyrin (H2TPP)/metal interfaces were also investigated, and similar linearity was observed between the energy levels of porphyrin and the work function of metal with the slope of much smaller than unity. This deviation of the slope from unity might be explained by the existence of interface state.
引用
收藏
页码:359 / 362
页数:4
相关论文
共 9 条
  • [1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
    BARDEEN, J
    [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
  • [2] Fuhrhop J.-H., 1975, PORPHYRINS METALLOPO
  • [3] ISHII H, IN PRESS
  • [4] THE CHEMICAL AND ELECTRONIC-STRUCTURE OF THE INTERFACE BETWEEN ALUMINUM AND CONJUGATED POLYMERS
    LAZZARONI, R
    BREDAS, JL
    DANNETUN, P
    FREDRIKSSON, C
    STAFSTROM, S
    SALANECK, WR
    [J]. ELECTROCHIMICA ACTA, 1994, 39 (02) : 235 - 244
  • [5] METAL-SEMICONDUCTOR CONTACTS - ELECTRONIC-PROPERTIES
    MONCH, W
    [J]. SURFACE SCIENCE, 1994, 299 (1-3) : 928 - 944
  • [6] C-60 BONDING AND ENERGY-LEVEL ALIGNMENT ON METAL AND SEMICONDUCTOR SURFACES
    OHNO, TR
    CHEN, Y
    HARVEY, SE
    KROLL, GH
    WEAVER, JH
    HAUFLER, RE
    SMALLEY, RE
    [J]. PHYSICAL REVIEW B, 1991, 44 (24): : 13747 - 13755
  • [7] A PLANE-GRATING MONOCHROMATOR FOR 2 EV LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 150 EV
    SEKI, K
    NAKAGAWA, H
    FUKUI, K
    ISHIGURO, E
    KATO, R
    MORI, T
    SAKAI, K
    WATANABE, M
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 246 (1-3) : 264 - 266
  • [8] UV PHOTOEMISSION-STUDY OF DYE/AGBR INTERFACES IN RELATION TO SPECTRAL SENSITIZATION
    SEKI, K
    YANAGI, H
    KOBAYASHI, Y
    OHTA, T
    TANI, T
    [J]. PHYSICAL REVIEW B, 1994, 49 (04): : 2760 - 2767
  • [9] CONDUCTANCE CONTROL OF PORPHYRIN SOLIDS BY MOLECULAR DESIGN AND DOPING
    YAMASHITA, K
    HARIMA, Y
    MATSUBAYASHI, T
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (13) : 5311 - 5315