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Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films -: art. no. 072508

被引：376
作者：
Béa, H
Bibes, M
Barthélémy, A
Bouzehouane, K
Jacquet, E
Khodan, A
Contour, JP
Fusil, S
Wyczisk, F
Forget, A
Lebeugle, D
Colson, D
Viret, M
机构：
[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
[2] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France
[3] Univ Evry, F-91025 Evry, France
[4] Thales Res & Technol, F-91767 Palaseau, France
[5] CEA Saclay, Serv Phys Etat Condense, DSM, DRECAM,SPEC, F-91191 Gif Sur Yvette, France
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期
关键词：
D O I：
10.1063/1.2009808
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10(-2) mbar and 580 degrees C. In nonoptimal conditions, x-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behavior, while single-phase films have a low bulklike magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures. (C) 2005 American Institute of Physics.
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