Room temperature Coulomb oscillation & memory effect for single electron memory made by pulse-mode AFM nano-oxidation process

被引：9

作者：

Matsumoto, K ^{[1
]}

Gotoh, Y ^{[1
]}

Maeda, T ^{[1
]}

Dagata, JA ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] MITI, Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single electron transistor(SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed the clear Coulomb oscillation characteristics with the periods of 2.1V at room temperature. A single electron memory showed the hysteresis loop by the return trip of the memory bias when starting from 0V to 10V and again coming back to 0V.

引用

页码：449 / 452

页数：4

共 5 条

[1] Understanding scanned probe oxidation of silicon [J].