Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

被引：16

作者：

Hegarty, SP ^{[1
]}

Huyet, G ^{[1
]}

Porta, P ^{[1
]}

McInerney, JG ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland

来源：

OPTICS LETTERS | 1998年 / 23卷 / 15期

关键词：

D O I：

10.1364/OL.23.001206

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser. (C) 1998 Optical Society of America.

引用

页码：1206 / 1208

页数：3

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