Heterointerface effects on the charging energy of the shallow D- ground state in silicon: Role of dielectric mismatch

被引：24

作者：

Calderon, M. J. ^{[1
]}

Verduijn, J. ^{[2
]}

Lansbergen, G. P. ^{[2
]}

Tettamanzi, G. C. ^{[2
]}

Rogge, S. ^{[2
]}

Koiller, Belita ^{[3
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[3] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, Brazil

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 07期

关键词：

SI; TRANSISTORS; GERMANIUM; ACCEPTORS; SYSTEMS; DONORS; FIELD; ATOM;

D O I：

10.1103/PhysRevB.82.075317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured reduction in the charging energy (measurements also presented here) may be due to a combined effect of the insulator screening and the proximity of metallic gates.

引用

页数：7

共 39 条

[1] Measuring the decoherence rate in a semiconductor charge qubit [J].

Barrett, SD ;

Milburn, GJ .

PHYSICAL REVIEW B, 2003, 68 (15)

[2]

Bethe H., 2008, Quantum Mechanics of One and Two Electron Atoms

[3]

Björk MT, 2009, NAT NANOTECHNOL, V4, P103, DOI [10.1038/NNANO.2008.400, 10.1038/nnano.2008.400]

[4]

Bransden B.H., 2003, Physics of atoms and molecules

[5] External field control of donor electron exchange at the Si/SiO2 interface [J].

Calderon, M. J. ;

Koiller, Belita ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2007, 75 (12)

[6] Proposal for electron spin relaxation measurements using double-donor excited states in Si quantum computer architectures [J].

Calderon, M. J. ;

Koiller, Belita ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2007, 75 (16)

[7] Quantum control of donor electrons at the Si-SiO2 interface [J].

Calderón, MJ ;

Koiller, B ;

Hu, XD ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 2006, 96 (09)

[8] The negative ions of hydrogen and oxygen in stellar atmospheres [J].

Chandrasekhar, S .

REVIEWS OF MODERN PHYSICS, 1944, 16 (3/4) :0301-0306

[9] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[10]

Delerue C., 2004, NANOSTRUCTURES THEOR

← 1 2 3 4 →