Transparent and flexible carbon nanotube transistors

被引：492

作者：

Artukovic, E

Kaempgen, M

Hecht, DS

Roth, S

GrUner, G ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2005年 / 5卷 / 04期

关键词：

D O I：

10.1021/nl050254o

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the fabrication of transparent and flexible transistors where both the bottom gate and the conducting channel are carbon nanotube networks of different densities and Parylene N is the gate insulator. Device mobilities of 1 cm(2) V-1 s(-1) and on/off ratios of 100 are obtained, with the latter influenced by the properties of the insulating layer. Repetitive bending has minor influence on the characteristics, with full recovery after repeated bending. The operation is insensitive to visible light and the gating does not influence the transmission in the visible spectral range.

引用

页码：757 / 760

页数：4

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