Graphene and graphene oxide nanogap electrodes fabricated by atomic force microscopy nanolithography

被引:66
作者
He, Yudong [1 ,2 ]
Dong, Huanli [1 ]
Li, Tao [1 ,2 ]
Wang, Chengliang [1 ,2 ]
Shao, Wei [1 ,2 ]
Zhang, Yajie [1 ,2 ]
Jiang, Lang [1 ,2 ]
Hu, Wenping [1 ]
机构
[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; LAYER GRAPHENE; FILMS; MOLECULES;
D O I
10.1063/1.3493647
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanogap electrodes have been studied intensively both as ideal research tools for molecular electronics and fundamental building blocks for nanodevices. Here, graphene and graphene oxide nanogap electrodes with gap width below 10 nm were fabricated by atomic force microscopy (AFM) nanolithography. It provides a simple and convenient way to fabricate nanogap electrodes and transfer the nanogap electrodes onto any required substrate. As a preliminary demonstration, organic field-effect transistors and organic photoswitchers based on the nanogap electrodes were fabricated, which all exhibited high performance, indicating the great prospect of the nanogap electrodes and the AFM nanolithography technique for molecular electronics. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493647]
引用
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页数:3
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