GaInNAs(Sb) surface normal devices

被引：8

作者：

Calvez, S. ^{[1
]}

Laurand, N. ^{[1
]}

Sun, H. D. ^{[1
]}

Weda, J. ^{[1
]}

Burns, D. ^{[1
]}

Dawson, M. D. ^{[1
]}

Harkonen, A. ^{[2
]}

Jouhti, T. ^{[2
]}

Pessa, M. ^{[2
]}

Hopkinson, M. ^{[3
]}

Poitras, D. ^{[4
]}

Gupta, J. A. ^{[4
]}

Leburn, C. G. ^{[5
]}

Brown, C. T. A. ^{[5
]}

Sibbett, W. ^{[5
]}

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[3] Univ Sheffield, EPSRC Natl Ctr Technologies 34, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[5] Univ St Andrews, Dept Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssa.200777460

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：85 / 92

页数：8

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